Infineon OptiMOS-T Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 IPD35N10S3L26ATMA1

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Subtotal (1 pack of 15 units)*

HK$94.50

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Units
Per unit
Per Pack*
15 - 615HK$6.30HK$94.50
630 - 1230HK$6.133HK$92.00
1245 +HK$6.047HK$90.71

*price indicative

Packaging Options:
RS Stock No.:
218-3043
Mfr. Part No.:
IPD35N10S3L26ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS-T

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

71W

Maximum Operating Temperature

175°C

Height

2.41mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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