Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252

The image is for reference only, please refer to product details and specifications

View all MOSFETs
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
217-2619
Mfr. Part No.:
IRFR2905ZTRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

14.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

29nC

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.39mm

Length

6.73mm

Automotive Standard

No

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead Free

Related links