Infineon HEXFET Type N-Channel MOSFET, 14 A, 30 V Enhancement, 8-Pin SO-8 IRF7458TRPBF
- RS Stock No.:
- 217-2605
- Distrelec Article No.:
- 304-39-416
- Mfr. Part No.:
- IRF7458TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
HK$146.20
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 10 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 980 | HK$7.31 | HK$146.20 |
| 1000 - 1980 | HK$7.13 | HK$142.60 |
| 2000 + | HK$7.02 | HK$140.40 |
*price indicative
- RS Stock No.:
- 217-2605
- Distrelec Article No.:
- 304-39-416
- Mfr. Part No.:
- IRF7458TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.9 mm | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 3.9 mm | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Automotive Standard No | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package.
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF8721TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8 IRF8714TRPBF
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33 PXN5R4-30QLJ
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33
- DiodesZetex DMG7430 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI3333 DMG7430LFGQ-7
- DiodesZetex DMG7430 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI3333