Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 55 A, 30 V Enhancement, 8-Pin PDFN56
- RS Stock No.:
- 216-9671
- Mfr. Part No.:
- TSM080N03EPQ56
- Manufacturer:
- Taiwan Semiconductor
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$28,800.00
FREE delivery for orders over HK$250.00
Being discontinued
- Final 5,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$11.52 | HK$28,800.00 |
| 5000 - 7500 | HK$11.269 | HK$28,172.50 |
| 10000 + | HK$11.019 | HK$27,547.50 |
*price indicative
- RS Stock No.:
- 216-9671
- Mfr. Part No.:
- TSM080N03EPQ56
- Manufacturer:
- Taiwan Semiconductor
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Power Dissipation Pd | 54W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 155°C | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Height | 1mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Power Dissipation Pd 54W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 155°C | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Height 1mm | ||
Width 5 mm | ||
Automotive Standard No | ||
not founs
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Related links
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