Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252 IPD50R650CEAUMA1

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Subtotal (1 pack of 25 units)*

HK$136.00

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Units
Per unit
Per Pack*
25 - 600HK$5.44HK$136.00
625 - 1225HK$5.304HK$132.60
1250 +HK$5.222HK$130.55

*price indicative

Packaging Options:
RS Stock No.:
214-9041
Mfr. Part No.:
IPD50R650CEAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

500V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

47W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.84V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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