Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 214-4380
- Mfr. Part No.:
- IPD530N15N3GATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$11,885.00
FREE delivery for orders over HK$250.00
In Stock
- 10,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | HK$4.754 | HK$11,885.00 |
| 12500 + | HK$4.658 | HK$11,645.00 |
*price indicative
- RS Stock No.:
- 214-4380
- Mfr. Part No.:
- IPD530N15N3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 8.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.35mm | |
| Width | 6.42 mm | |
| Standards/Approvals | No | |
| Length | 6.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 8.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 175°C | ||
Height 2.35mm | ||
Width 6.42 mm | ||
Standards/Approvals No | ||
Length 6.65mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET is ideal for high-frequency switching and synchronous rectification. It is qualified according to JEDEC for target application
It is Halogen-free according to IEC61249-2-21
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 8-Pin TSDSON BSZ520N15NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 8-Pin TDSON BSC520N15NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD082N10N3GATMA1