Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2

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HK$175.20

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Units
Per unit
Per Pack*
200 - 600HK$0.876HK$175.20
800 - 1400HK$0.854HK$170.80
1600 +HK$0.841HK$168.20

*price indicative

Packaging Options:
RS Stock No.:
214-4337
Mfr. Part No.:
BSS7728NH6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.36W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Length

3.04mm

Automotive Standard

AEC-Q101

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

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