Vishay Type N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3
- RS Stock No.:
- 210-4999
- Mfr. Part No.:
- SIR178DP-T1-RE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$61.60
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 21 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | HK$12.32 | HK$61.60 |
| 750 - 1495 | HK$12.04 | HK$60.20 |
| 1500 + | HK$11.82 | HK$59.10 |
*price indicative
- RS Stock No.:
- 210-4999
- Mfr. Part No.:
- SIR178DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 430A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.31mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 204nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Width | 5.26 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 430A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.31mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 204nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 6.25mm | ||
Width 5.26 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 20 V (D-S) MOSFET has PowerPAK SO-8 package type with 430 A drain current.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Leadership RDS(ON) minimizes power loss from conduction
2.5 V ratings and operation at low voltage gate drive
100 % Rg and UIS tested
Related links
- Vishay Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8
- Vishay Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3
- Vishay SiDR220DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3
- Vishay SiRA Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3