Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 5 units)*

HK$78.80

Add to Basket
Select or type quantity
In Stock
  • 960 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 10HK$15.76HK$78.80
15 - 20HK$15.36HK$76.80
25 +HK$14.90HK$74.50

*price indicative

Packaging Options:
RS Stock No.:
210-4963
Mfr. Part No.:
SiHA186N60EF-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

21nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

33W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

28.1mm

Width

9.7 mm

Height

4.3mm

Standards/Approvals

No

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has Thin-Lead TO-220 FULLPAK package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Related links