Vishay SiHA125N60EF Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-220 SIHA125N60EF-GE3

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Subtotal (1 pack of 5 units)*

HK$160.60

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Units
Per unit
Per Pack*
5 - 245HK$32.12HK$160.60
250 - 495HK$31.32HK$156.60
500 +HK$30.84HK$154.20

*price indicative

Packaging Options:
RS Stock No.:
204-7242
Mfr. Part No.:
SIHA125N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

SiHA125N60EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

31nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.7 mm

Height

4.3mm

Length

28.1mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

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