Vishay SiHG052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-247 SIHG052N60EF-GE3

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Subtotal (1 pack of 5 units)*

HK$285.50

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Units
Per unit
Per Pack*
5 - 120HK$57.10HK$285.50
125 - 245HK$55.68HK$278.40
250 +HK$54.82HK$274.10

*price indicative

Packaging Options:
RS Stock No.:
204-7207
Mfr. Part No.:
SIHG052N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Series

SiHG052N60EF

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

101nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

20.7mm

Standards/Approvals

No

Length

15.87mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er)

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