Vishay SiHA105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SIHA105N60EF-GE3

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Subtotal (1 pack of 5 units)*

HK$127.50

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Per Pack*
5 - 245HK$25.50HK$127.50
250 - 495HK$24.86HK$124.30
500 +HK$24.46HK$122.30

*price indicative

Packaging Options:
RS Stock No.:
204-7202
Mfr. Part No.:
SIHA105N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Series

SiHA105N60EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

102mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

35W

Typical Gate Charge Qg @ Vgs

53nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

10.3mm

Standards/Approvals

No

Width

4.7 mm

Height

13.8mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er)

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