Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 3000 units)*

HK$30,186.00

Add to Basket
Select or type quantity
Orders below HK$250.00 (exc. GST) cost HK$50.00.
Temporarily out of stock
  • Shipping from 02 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 3000HK$10.062HK$30,186.00
6000 - 9000HK$9.76HK$29,280.00
12000 +HK$9.467HK$28,401.00

*price indicative

RS Stock No.:
204-7199
Mfr. Part No.:
SiR626ADP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

165A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SiR626ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.75mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

83nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Width

1.12 mm

Length

5.26mm

Standards/Approvals

No

Height

6.25mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET is tuned for the lowest RDS - Qoss FOM.

Package Power PAK SO-8

TrenchFET Gen IV power MOSFET

Related links