Vishay SQD10950E Type N-Channel MOSFET, 11.5 A, 250 V Enhancement, 3-Pin TO-252 SQD10950E_GE3

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Subtotal (1 reel of 2000 units)*

HK$11,500.00

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Units
Per unit
Per Reel*
2000 - 2000HK$5.75HK$11,500.00
4000 - 6000HK$5.635HK$11,270.00
8000 +HK$5.466HK$10,932.00

*price indicative

RS Stock No.:
200-6792
Mfr. Part No.:
SQD10950E_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Series

SQD10950E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62W

Typical Gate Charge Qg @ Vgs

16nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

10.41mm

Width

2.38 mm

Automotive Standard

AEC-Q101

The Vishay SQD10950E_GE3 is a automotive N-channel 250V (D-S) 175°C MOSFET.

TrenchFET power MOSFET

Package with low thermal resistance

100 % Rg and UIS tested

AEC-Q101 qualified

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