STMicroelectronics Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 STB80NF55-06T4

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Subtotal (1 pack of 5 units)*

HK$160.10

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Units
Per unit
Per Pack*
5 - 245HK$32.02HK$160.10
250 - 495HK$31.24HK$156.20
500 +HK$30.74HK$153.70

*price indicative

Packaging Options:
RS Stock No.:
188-8527
Mfr. Part No.:
STB80NF55-06T4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

142nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

4.37mm

Width

9.35 mm

Standards/Approvals

No

Length

10.4mm

Automotive Standard

No

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Exceptional dv/dt capability

Application oriented characterization

Applications

Switching application

Applications

Switching application

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