Vishay SiHP22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-220 SIHP22N60EF-GE3

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Subtotal (1 pack of 5 units)*

HK$158.30

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Per unit
Per Pack*
5 - 10HK$31.66HK$158.30
15 - 20HK$30.86HK$154.30
25 +HK$30.40HK$152.00

*price indicative

Packaging Options:
RS Stock No.:
188-4996
Mfr. Part No.:
SIHP22N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

SiHP22N60EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

182mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

48nC

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Height

9.01mm

Standards/Approvals

No

Width

4.65 mm

Length

10.51mm

Automotive Standard

No

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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