N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220AB Vishay SIHP22N60EF-GE3

RS Stock No.:: 188-4996
Mfr. Part No.:: SIHP22N60EF-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220AB Vishay SIHP22N60EF-GE3

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Price Each (In a Pack of 5)**

HK$26.16

4735 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per unit	Per Pack**
5 - 10	HK$26.16	HK$130.80
15 - 20	HK$25.50	HK$127.50
25 +	HK$25.12	HK$125.60

**price indicative

RS Stock No.:: 188-4996
Mfr. Part No.:: SIHP22N60EF-GE3
Manufacturer:: Vishay

Datasheet SIHP22N60EF-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	19 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	182 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	179 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Typical Gate Charge @ Vgs	48 nC @ 10 V
Length	10.51mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.65mm
Forward Diode Voltage	1.2V
Height	9.01mm
Minimum Operating Temperature	-55 °C