Vishay SiHG039N60EF Type N-Channel MOSFET, 61 A, 600 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

HK$1,520.70

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Units
Per unit
Per Tube*
25 - 25HK$60.828HK$1,520.70
50 - 75HK$59.508HK$1,487.70
100 +HK$58.184HK$1,454.60

*price indicative

RS Stock No.:
188-4875
Mfr. Part No.:
SIHG039N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

SiHG039N60EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

357W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

84nC

Maximum Operating Temperature

150°C

Height

20.82mm

Length

15.87mm

Standards/Approvals

No

Width

5.31 mm

Automotive Standard

No

EF Series Power MOSFET With Fast Body Diode.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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