ROHM RJ1L12BGN Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263AB RJ1L12BGNTLL

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Subtotal (1 pack of 2 units)*

HK$102.10

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Per unit
Per Pack*
2 - 8HK$51.05HK$102.10
10 - 18HK$49.75HK$99.50
20 - 198HK$48.55HK$97.10
200 +HK$47.35HK$94.70

*price indicative

RS Stock No.:
183-6004
Mfr. Part No.:
RJ1L12BGNTLL
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263AB

Series

RJ1L12BGN

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

175nC

Maximum Power Dissipation Pd

192W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.4mm

Width

9.2 mm

Height

4.7mm

COO (Country of Origin):
KP
RJ1L12BGN is low on-resistance and small surface mount package MOSFET for switching application.

Low on - resistance

High power small mold package

Pb-free lead plating

Halogen free

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