ROHM RJ1L12BGN Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263AB RJ1L12BGNTLL
- RS Stock No.:
- 183-6004
- Mfr. Part No.:
- RJ1L12BGNTLL
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$105.20
FREE delivery for orders over HK$250.00
Last RS stock
- Final 30 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$52.60 | HK$105.20 |
| 10 - 18 | HK$51.25 | HK$102.50 |
| 20 - 198 | HK$50.00 | HK$100.00 |
| 200 + | HK$48.75 | HK$97.50 |
*price indicative
- RS Stock No.:
- 183-6004
- Mfr. Part No.:
- RJ1L12BGNTLL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263AB | |
| Series | RJ1L12BGN | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 192W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.4mm | |
| Height | 4.7mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263AB | ||
Series RJ1L12BGN | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 192W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.4mm | ||
Height 4.7mm | ||
- COO (Country of Origin):
- KP
RJ1L12BGN is low on-resistance and small surface mount package MOSFET for switching application.
Low on - resistance
High power small mold package
Pb-free lead plating
Halogen free
Related links
- ROHM RJ1 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1
- ROHM RJ1L08CGN Type N-Channel MOSFET Enhancement, 3-Pin TO-263AB RJ1L08CGNTLL
- ROHM RJ1 1 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263AB RJ1R10BBHTL1
- ROHM RJ1 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P10BBHTL1
- ROHM RJ1 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P04BBHTL1
- ROHM RJ1N04BBHT Type N-Channel Single MOSFETs 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1
- ROHM RJ1 Type N-Channel Single MOSFETs 3-Pin TO-263AB RJ1R04BBHTL1
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD038N06NF2SATMA1