ROHM HP8S36 Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 HP8S36TB
- RS Stock No.:
- 178-5992
- Mfr. Part No.:
- HP8S36TB
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$124.60
FREE delivery for orders over HK$250.00
Last RS stock
- Final 330 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | HK$12.46 | HK$124.60 |
| 50 - 90 | HK$12.15 | HK$121.50 |
| 100 - 240 | HK$11.84 | HK$118.40 |
| 250 - 990 | HK$11.55 | HK$115.50 |
| 1000 + | HK$11.26 | HK$112.60 |
*price indicative
- RS Stock No.:
- 178-5992
- Mfr. Part No.:
- HP8S36TB
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 27 A, 80 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HP8S36 | |
| Package Type | HSOP8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 22 W, 29 W | |
| Maximum Gate Source Voltage | ±128 V, ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel) | |
| Length | 5mm | |
| Width | 5.8mm | |
| Number of Elements per Chip | 2 | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 27 A, 80 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HP8S36 | ||
Package Type HSOP8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 22 W, 29 W | ||
Maximum Gate Source Voltage ±128 V, ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel) | ||
Length 5mm | ||
Width 5.8mm | ||
Number of Elements per Chip 2 | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
- COO (Country of Origin):
- TH
HP8S36 is low on-resistance MOSFET for switching application.
Low on - resistance
Pb-free lead plating
Halogen Free
Built in Schottky-barrier diode(Tr2)
Pb-free lead plating
Halogen Free
Built in Schottky-barrier diode(Tr2)
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