N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3
- RS Stock No.:
- 178-3962
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 16/09/2024, delivery within 3 working days
Added
Price Each (In a Pack of 25)
HK$4.185
| Units | Per unit | Per Pack* |
| 25 - 725 | HK$4.185 | HK$104.625 |
| 750 - 1475 | HK$4.08 | HK$102.00 |
| 1500 + | HK$4.018 | HK$100.45 |
| *price indicative | ||
- RS Stock No.:
- 178-3962
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss FOM
Tuned for the lowest RDS - Qoss FOM
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 14.2 A |
| Maximum Drain Source Voltage | 100 V |
| Series | TrenchFET |
| Package Type | PowerPAK 1212-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 70 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 24 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 8.5 nC @ 10 V |
| Length | 3.15mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 3.15mm |
| Forward Diode Voltage | 1.2V |
| Height | 1.07mm |
| Minimum Operating Temperature | -55 °C |