P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK Vishay Siliconix SQD40061EL_GE3
- RS Stock No.:
- 178-3960P
- Mfr. Part No.:
- SQD40061EL_GE3
- Manufacturer:
- Vishay Siliconix
1870 In stock for delivery within 3 working days
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$8.884
| Units | Per unit |
| 500 - 990 | HK$8.884 |
| 1000 + | HK$8.747 |
- RS Stock No.:
- 178-3960P
- Mfr. Part No.:
- SQD40061EL_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- TW
Product Details
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 40 V |
| Series | TrenchFET |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 10 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 107 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 2.38mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V |
| Length | 6.73mm |
| Height | 6.22mm |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |