Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3

RS Stock No.:: 178-3932P
Mfr. Part No.:: SiZ348DT-T1-GE3
Manufacturer:: Vishay Siliconix

Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3

3880 In stock for delivery within 3 working days

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

HK$5.92

Units	Per unit
750 - 1490	HK$5.92
1500 +	HK$5.829

RS Stock No.:: 178-3932P
Mfr. Part No.:: SiZ348DT-T1-GE3
Manufacturer:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	PowerPAIR 3 x 3
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	10 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	16.7 W
Maximum Gate Source Voltage	-16 V, +20 V
Length	3mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	12.1 nC @ 10 V
Width	3mm
Minimum Operating Temperature	-55 °C
Height	0.75mm
Forward Diode Voltage	1.2V