Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3
- RS Stock No.:
- 178-3932
- Mfr. Part No.:
- SiZ348DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
3880 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 10)
HK$6.071
| Units | Per unit | Per Pack* |
| 10 - 740 | HK$6.071 | HK$60.71 |
| 750 - 1490 | HK$5.92 | HK$59.20 |
| 1500 + | HK$5.829 | HK$58.29 |
| *price indicative | ||
- RS Stock No.:
- 178-3932
- Mfr. Part No.:
- SiZ348DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- TW
Product Details
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAIR 3 x 3 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 10 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 16.7 W |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3mm |
| Typical Gate Charge @ Vgs | 12.1 nC @ 10 V |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Width | 3mm |
| Height | 0.75mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |