N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3
- RS Stock No.:
- 178-3901
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
View all MOSFETs
Available for back order.
Price Each (In a Pack of 10)
HK$8.495
units | Per unit | Per Pack* |
10 - 740 | HK$8.495 | HK$84.95 |
750 - 1490 | HK$8.283 | HK$82.83 |
1500 + | HK$8.156 | HK$81.56 |
*price indicative |
Packaging Options:
- RS Stock No.:
- 178-3901
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss
Specifications
Attribute | Value |
Channel Type | N |
Maximum Continuous Drain Current | 12 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SC-70-6L |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 20 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 19 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Transistor Material | Si |
Length | 2.2mm |
Typical Gate Charge @ Vgs | 8.9 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 1.35mm |
Height | 1mm |
Series | TrenchFET |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |