Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual Vishay Siliconix SQJ504EP-T1_GE3
- RS Stock No.:
- 178-3893P
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$8.688
| Units | Per unit |
| 750 - 1490 | HK$8.688 |
| 1500 + | HK$8.555 |
- RS Stock No.:
- 178-3893P
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | PowerPak SO-8L Dual |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 34 W, 34 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V |
| Length | 5.99mm |
| Maximum Operating Temperature | +175 °C |
| Width | 5mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Height | 1.07mm |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |