Vishay Siliconix TrenchFET Type P-Channel MOSFET, 16 A, 80 V Enhancement, 8-Pin SO-8 SQJ481EP-T1_GE3
- RS Stock No.:
- 178-3883P
- Mfr. Part No.:
- SQJ481EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
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Bulk discount available
View bulk pricing optionsSubtotal 750 units (supplied on a reel)*
HK$5,817.00
FREE delivery for orders over HK$250.00
In Stock
- 8,975 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 750 - 1475 | HK$7.756 |
| 1500 + | HK$7.636 |
*price indicative
- RS Stock No.:
- 178-3883P
- Mfr. Part No.:
- SQJ481EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.07mm | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Length | 5.99mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 175°C | ||
Height 1.07mm | ||
Width 5mm | ||
Standards/Approvals No | ||
Length 5.99mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of20V. It has drain-source resistance of 80mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 16A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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