P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3
- RS Stock No.:
- 178-3853P
- Mfr. Part No.:
- Si2319DDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 30/08/2024, delivery within 3 working days
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$3.005
| Units | Per unit |
| 750 - 1450 | HK$3.005 |
| 1500 + | HK$2.959 |
- RS Stock No.:
- 178-3853P
- Mfr. Part No.:
- Si2319DDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen III p-channel power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOT-23 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 1.4mm |
| Maximum Operating Temperature | +150 °C |
| Length | 3.04mm |
| Typical Gate Charge @ Vgs | 12.5 nC @ 10 V |
| Height | 1.02mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |