Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SQS966ENW-T1_GE3
- RS Stock No.:
- 178-3851
- Mfr. Part No.:
- SQS966ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 29/06/2026, delivery within 3 working days
Added
Price Each (In a Pack of 25)
HK$6.024
| Units | Per unit | Per Pack* |
| 25 - 725 | HK$6.024 | HK$150.60 |
| 750 - 1475 | HK$5.873 | HK$146.825 |
| 1500 + | HK$5.783 | HK$144.575 |
| *price indicative | ||
- RS Stock No.:
- 178-3851
- Mfr. Part No.:
- SQS966ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | PowerPAK 1212-8 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 60 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 27.8 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Length | 3.15mm |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |
| Width | 3.15mm |
| Maximum Operating Temperature | +175 °C |
| Forward Diode Voltage | 1.1V |
| Height | 1.07mm |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |