P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3
- RS Stock No.:
- 178-3717
- Mfr. Part No.:
- SQJ415EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 12/05/2025, delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$3.455
| Units | Per unit | Per Reel* |
| 3000 - 12000 | HK$3.455 | HK$10,365.00 |
| 15000 + | HK$3.386 | HK$10,158.00 |
| *price indicative | ||
- RS Stock No.:
- 178-3717
- Mfr. Part No.:
- SQJ415EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 40 V |
| Series | TrenchFET |
| Package Type | PowerPAK SO-8L |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Length | 5.99mm |
| Width | 5mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Height | 1.07mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |