Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ350DT-T1-GE3
- RS Stock No.:
- 178-3703
- Mfr. Part No.:
- SiZ350DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 02/09/2024, delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$4.295
| Units | Per unit | Per Reel* |
| 3000 - 12000 | HK$4.295 | HK$12,885.00 |
| 15000 + | HK$4.21 | HK$12,630.00 |
| *price indicative | ||
- RS Stock No.:
- 178-3703
- Mfr. Part No.:
- SiZ350DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 30 V |
| Series | TrenchFET |
| Package Type | PowerPAIR 3 x 3 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 16.7 W |
| Maximum Gate Source Voltage | -12 V, +16 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 13.5 nC @ 10 V |
| Length | 3mm |
| Width | 3mm |
| Transistor Material | Si |
| Height | 0.75mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |