Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ350DT-T1-GE3
- RS Stock No.:
- 178-3703
- Mfr. Part No.:
- SiZ350DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
View all MOSFETs
Available for back order.
Price Each (On a Reel of 3000)
HK$5.109
units | Per unit | Per Reel* |
3000 - 12000 | HK$5.109 | HK$15,327.00 |
15000 + | HK$4.598 | HK$13,794.00 |
*price indicative |
- RS Stock No.:
- 178-3703
- Mfr. Part No.:
- SiZ350DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
RoHS Status: Not Applicable
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
Specifications
Attribute | Value |
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 30 V |
Package Type | PowerPAIR 3 x 3 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 9 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.4V |
Maximum Power Dissipation | 16.7 W |
Maximum Gate Source Voltage | -12 V, +16 V |
Number of Elements per Chip | 2 |
Width | 3mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 13.5 nC @ 10 V |
Length | 3mm |
Forward Diode Voltage | 1.2V |
Height | 0.75mm |
Series | TrenchFET |
Minimum Operating Temperature | -55 °C |