- RS Stock No.:
- 178-3693
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 03/11/2025, delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$2.169
Units | Per unit | Per Reel* |
3000 - 3000 | HK$2.169 | HK$6,507.00 |
6000 - 9000 | HK$2.126 | HK$6,378.00 |
12000 + | HK$2.083 | HK$6,249.00 |
*price indicative |
- RS Stock No.:
- 178-3693
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss FOM
Tuned for the lowest RDS - Qoss FOM
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 14.2 A |
Maximum Drain Source Voltage | 100 V |
Series | TrenchFET |
Package Type | PowerPAK 1212-8 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 70 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 4V |
Maximum Power Dissipation | 24 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Width | 3.15mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 3.15mm |
Typical Gate Charge @ Vgs | 8.5 nC @ 10 V |
Height | 1.07mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |