N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

RS Stock No.:: 177-5342
Mfr. Part No.:: IXFN210N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

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270 In stock for delivery within 3 working days

估計總價 (10 Units)

HK$3,345.23

Units	Per unit	Per Tube*
10 - 10	HK$334.523	HK$3,345.23
20 - 30	HK$327.833	HK$3,278.33
40 +	HK$321.276	HK$3,212.76
*price indicative

RS Stock No.:: 177-5342
Mfr. Part No.:: IXFN210N30P3
Manufacturer:: IXYS

IXFN210N30P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	192 A
Maximum Drain Source Voltage	300 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	25.07mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	268 nC @ 10 V
Length	38.23mm
Maximum Operating Temperature	+150 °C
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series