- RS Stock No.:
- 171-3615
- Mfr. Part No.:
- TSM2308CX RFG
- Manufacturer:
- Taiwan Semiconductor
12000 In stock for delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$4.275
Units | Per unit | Per Reel* |
3000 - 3000 | HK$4.275 | HK$12,825.00 |
6000 - 9000 | HK$4.19 | HK$12,570.00 |
12000 + | HK$4.106 | HK$12,318.00 |
*price indicative |
- RS Stock No.:
- 171-3615
- Mfr. Part No.:
- TSM2308CX RFG
- Manufacturer:
- Taiwan Semiconductor
Product overview and Technical data sheets
Legislation and Compliance
Product Details
The Taiwan Semiconductor 60V, 3A, 3 pin, N-channel MOSFET has single transistor configuration and enhancement channel mode. It is generally used DC-DC power system
and load switch applications.
and load switch applications.
Advance trench process technology
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 3 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 192 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 1.25 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Width | 1.4mm |
Typical Gate Charge @ Vgs | 3.99 nC @ 4.5 V |
Length | 3mm |
Maximum Operating Temperature | +150 °C |
Height | 1.05mm |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |