Toshiba Type N-Channel MOSFET, 400 mA, 60 V Enhancement, 3-Pin SOT-23

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HK$603.00

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Units
Per unit
Per Reel*
3000 - 3000HK$0.201HK$603.00
6000 - 9000HK$0.195HK$585.00
12000 +HK$0.189HK$567.00

*price indicative

RS Stock No.:
171-2411
Mfr. Part No.:
T2N7002BK
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

400mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.75Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.39nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1W

Forward Voltage Vf

-0.79V

Maximum Operating Temperature

150°C

Width

1.3 mm

Standards/Approvals

No

Height

0.9mm

Length

2.9mm

Automotive Standard

No

COO (Country of Origin):
TH
High-Speed Switching

ESD(HBM) level 2 kV

Low drain-source on-resistance

RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)

RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)

RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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