DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

HK$4,790.00

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Units
Per unit
Per Reel*
2500 - 2500HK$1.916HK$4,790.00
5000 - 7500HK$1.878HK$4,695.00
10000 +HK$1.84HK$4,600.00

*price indicative

RS Stock No.:
169-7498
Mfr. Part No.:
DMN6070SSD-13
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.5W

Forward Voltage Vf

0.75V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

5.6nC

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1.5mm

Length

4.95mm

Width

3.95 mm

Standards/Approvals

J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

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