N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2

RS Stock No.:: 168-4794
Mfr. Part No.:: MMIX1T550N055T2
Manufacturer:: IXYS

N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2

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On back order for despatch 11/12/2024, delivery within 3 working days

Price Each (In a Tube of 20)

HK$319.153

Units	Per unit	Per Tube*
20 - 20	HK$319.153	HK$6,383.06
40 - 180	HK$309.578	HK$6,191.56
200 +	HK$303.387	HK$6,067.74
*price indicative

RS Stock No.:: 168-4794
Mfr. Part No.:: MMIX1T550N055T2
Manufacturer:: IXYS

MMIX1T550N055T2, TrenchT2 GigaMOS Power MOSFET N-Channel 55V 550A SMPD
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	550 A
Maximum Drain Source Voltage	55 V
Series	GigaMOS, HiperFET
Package Type	SMPD
Mounting Type	Surface Mount
Pin Count	24
Maximum Drain Source Resistance	1.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.8V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	25.25mm
Width	23.25mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	595 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	5.7mm
Forward Diode Voltage	1.2V

N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series