IXYS Trench Type N-Channel MOSFET, 110 A, 250 V Enhancement, 3-Pin TO-247

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tube of 30 units)*

HK$1,659.69

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 30HK$55.323HK$1,659.69
60 - 90HK$54.12HK$1,623.60
120 +HK$52.92HK$1,587.60

*price indicative

RS Stock No.:
168-4583
Mfr. Part No.:
IXTH110N25T
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

250V

Series

Trench

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

694W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Operating Temperature

150°C

Width

5.3 mm

Standards/Approvals

No

Length

16.26mm

Height

21.46mm

Automotive Standard

No

N-Channel Trench-Gate Power MOSFET, IXYS


Trench Gate MOSFET Technology

Low on-state Resistance RDS(on)

Superior avalanche ruggedness

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links