N-Channel MOSFET, 179 A, 30 V, 3-Pin DPAK Infineon IRFR8314TRPBF
- RS Stock No.:
- 165-8287
- Mfr. Part No.:
- IRFR8314TRPBF
- Manufacturer:
- Infineon
On back order for despatch 05/05/2025, delivery within 3 working days
Added
Price Each (On a Reel of 2000)
HK$5.408
| Units | Per unit | Per Reel* |
| 2000 - 8000 | HK$5.408 | HK$10,816.00 |
| 10000 + | HK$5.30 | HK$10,600.00 |
| *price indicative | ||
- RS Stock No.:
- 165-8287
- Mfr. Part No.:
- IRFR8314TRPBF
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 179 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DPAK (TO-252) |
| Series | HEXFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 36 nC @ 4.5 V |
| Number of Elements per Chip | 1 |
| Width | 7.49mm |
| Minimum Operating Temperature | -55 °C |
| Height | 2.39mm |
| Forward Diode Voltage | 1V |