N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 Vishay SIB406EDK-T1-GE3
- RS Stock No.:
- 165-7263
- Mfr. Part No.:
- SIB406EDK-T1-GE3
- Manufacturer:
- Vishay
On back order for despatch 21/07/2025, delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$1.88
| Units | Per unit | Per Reel* |
| 3000 - 12000 | HK$1.88 | HK$5,640.00 |
| 15000 + | HK$1.843 | HK$5,529.00 |
| *price indicative | ||
- RS Stock No.:
- 165-7263
- Mfr. Part No.:
- SIB406EDK-T1-GE3
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.1 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SC-75 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 63 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 10 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Width | 1.7mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 1.7mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 7.5 nC @ 10 V |
| Height | 0.8mm |
| Minimum Operating Temperature | -55 °C |