N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

RS Stock No.:: 165-6981
Mfr. Part No.:: SIS892ADN-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

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Subtotal (1 reel of 3000 units)**

HK$12,030.00

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Reel**
3000 - 3000	HK$4.01	HK$12,030.00
6000 - 9000	HK$3.93	HK$11,790.00
12000 +	HK$3.851	HK$11,553.00

**price indicative

RS Stock No.:: 165-6981
Mfr. Part No.:: SIS892ADN-T1-GE3
Manufacturer:: Vishay

SiS892ADN, N-Channel 100V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	3.4mm
Width	3.4mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	12.8 nC @ 10 V
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor