- RS Stock No.:
- 162-8145
- Mfr. Part No.:
- CSD19531Q5AT
- Manufacturer:
- Texas Instruments
1000 In stock for delivery within 3 working days
Added
Price Each (On a Reel of 250)
HK$10.815
Units | Per unit | Per Reel* |
250 - 250 | HK$10.815 | HK$2,703.75 |
500 - 750 | HK$10.599 | HK$2,649.75 |
1000 + | HK$10.387 | HK$2,596.75 |
*price indicative |
- RS Stock No.:
- 162-8145
- Mfr. Part No.:
- CSD19531Q5AT
- Manufacturer:
- Texas Instruments
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 110 A |
Maximum Drain Source Voltage | 100 V |
Package Type | VSONP |
Series | NexFET |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 7.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.3V |
Minimum Gate Threshold Voltage | 2.2V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 6.1mm |
Typical Gate Charge @ Vgs | 37 nC @ 10 V |
Width | 5mm |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 1.1mm |