Infineon IRF3710ZS Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 162-3273
- Mfr. Part No.:
- IRF3710ZSTRLPBF
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 3200 | HK$7.577 | HK$6,061.60 |
| 4000 + | HK$7.425 | HK$5,940.00 |
*price indicative
- RS Stock No.:
- 162-3273
- Mfr. Part No.:
- IRF3710ZSTRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF3710ZS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF3710ZS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Automotive Standard AEC-Q101 | ||
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
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