Nexperia P-Channel MOSFET, 3.2 A, -12 V, 4-Pin DFN1010D-3 PMXB65UPEZ
- RS Stock No.:
- 151-3145P
- Mfr. Part No.:
- PMXB65UPEZ
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal 1250 units (supplied on a reel)*
HK$2,245.00
FREE delivery for orders over HK$250.00
In Stock
- 250 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1250 - 2450 | HK$1.796 |
| 2500 + | HK$1.77 |
*price indicative
- RS Stock No.:
- 151-3145P
- Mfr. Part No.:
- PMXB65UPEZ
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.2 A | |
| Maximum Drain Source Voltage | -12 V | |
| Package Type | DFN1010D-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 880 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -1V | |
| Minimum Gate Threshold Voltage | -0.4V | |
| Maximum Power Dissipation | 8330 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 8 V | |
| Typical Gate Charge @ Vgs | 6.7 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 1.15mm | |
| Width | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.36mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.2 A | ||
Maximum Drain Source Voltage -12 V | ||
Package Type DFN1010D-3 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 880 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -1V | ||
Minimum Gate Threshold Voltage -0.4V | ||
Maximum Power Dissipation 8330 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 8 V | ||
Typical Gate Charge @ Vgs 6.7 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 1.15mm | ||
Width 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.36mm | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 59 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 59 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V