N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXYS IXFP26N50P3
- RS Stock No.:
- 146-1749
- Mfr. Part No.:
- IXFP26N50P3
- Manufacturer:
- IXYS
On back order for despatch 24/02/2025, delivery within 3 working days
Added
Price Each (In a Tube of 50)
HK$56.752
| Units | Per unit | Per Tube* |
| 50 - 200 | HK$56.752 | HK$2,837.60 |
| 250 + | HK$51.077 | HK$2,553.85 |
| *price indicative | ||
- RS Stock No.:
- 146-1749
- Mfr. Part No.:
- IXFP26N50P3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 26 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220AB |
| Series | HiperFET, Polar3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 240 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 500 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 10.66mm |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Transistor Material | Si |
| Width | 4.83mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 16mm |