ROHM RQ6E060AT P-Channel MOSFET, 6 A, 30 V, 6-Pin TSMT-6 RQ6E060ATTCR
- RS Stock No.:
- 133-3307
- Mfr. Part No.:
- RQ6E060ATTCR
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$133.80
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | HK$5.352 | HK$133.80 |
| 125 - 225 | HK$5.256 | HK$131.40 |
| 250 - 1225 | HK$5.16 | HK$129.00 |
| 1250 - 2475 | HK$5.068 | HK$126.70 |
| 2500 + | HK$4.976 | HK$124.40 |
*price indicative
- RS Stock No.:
- 133-3307
- Mfr. Part No.:
- RQ6E060ATTCR
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSMT-6 | |
| Series | RQ6E060AT | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 34.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.8mm | |
| Typical Gate Charge @ Vgs | 25.9 nC @ 10 V | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSMT-6 | ||
Series RQ6E060AT | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 34.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 1.8mm | ||
Typical Gate Charge @ Vgs 25.9 nC @ 10 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- JP
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor