N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4P7ATMA1

RS Stock No.:: 130-0906P
Mfr. Part No.:: IPD80R1K4P7ATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4P7ATMA1

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Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

HK$6.16

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FREE delivery for orders over HK$850.00

Units	Per unit
5 +	HK$6.16

RS Stock No.:: 130-0906P
Mfr. Part No.:: IPD80R1K4P7ATMA1
Manufacturer:: Infineon

IPD80R1K4P7, MOSFET 800V CoolMOS P7 Power Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	800 V
Series	CoolMOS™ P7
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	32 W
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	6.73mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	10 nC @ 10 V
Width	6.22mm
Height	2.41mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	0.9V

N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4P7ATMA1

FREE delivery for orders over HK$850.00

Infineon CoolMOS™P7 Power MOSFET