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    P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon IPB120P04P4L03ATMA1

    Infineon
    RS Stock No.:
    124-8751
    Mfr. Part No.:
    IPB120P04P4L03ATMA1
    Manufacturer:
    Infineon
    View all MOSFETs
    On back order for despatch 13/11/2023, delivery within 3 working days
    Add to Basket
    units

    Added

    Price Each (On a Reel of 1000)

    HK$36.095

    unitsPer unitPer Reel*
    1000 - 1000HK$36.095HK$36,095.00
    2000 - 3000HK$35.31HK$35,310.00
    4000 +HK$34.526HK$34,526.00
    *price indicative
    RS Stock No.:
    124-8751
    Mfr. Part No.:
    IPB120P04P4L03ATMA1
    Manufacturer:
    Infineon

    Legislation and Compliance

    RoHS Status: Exempt

    COO (Country of Origin):
    CN

    Product Details

    Infineon OptiMOS™P P-Channel Power MOSFETs


    The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

    Enhancement mode
    Avalanche rated
    Low switching and conduction power losses
    Pb-free lead plating; RoHS compliant
    Standard packages
    OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

    For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specifications

    AttributeValue
    Channel TypeP
    Maximum Continuous Drain Current120 A
    Maximum Drain Source Voltage40 V
    Package TypeD2PAK (TO-263)
    Mounting TypeSurface Mount
    Pin Count3
    Maximum Drain Source Resistance5.2 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage2.2V
    Minimum Gate Threshold Voltage1.2V
    Maximum Power Dissipation136 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-16 V, +16 V
    Number of Elements per Chip1
    Maximum Operating Temperature+175 °C
    Width9.25mm
    Transistor MaterialSi
    Length10mm
    Typical Gate Charge @ Vgs180 nC @ 10 V
    SeriesOptiMOS P
    Height4.4mm
    Minimum Operating Temperature-55 °C
    On back order for despatch 13/11/2023, delivery within 3 working days
    Add to Basket
    units

    Added

    Price Each (On a Reel of 1000)

    HK$36.095

    unitsPer unitPer Reel*
    1000 - 1000HK$36.095HK$36,095.00
    2000 - 3000HK$35.31HK$35,310.00
    4000 +HK$34.526HK$34,526.00
    *price indicative