DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 7.8 A, 30 V Enhancement, 8-Pin SOIC

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HK$10,337.50

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  • 22,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 2500HK$4.135HK$10,337.50
5000 - 7500HK$4.052HK$10,130.00
10000 +HK$3.971HK$9,927.50

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RS Stock No.:
122-3273
Mfr. Part No.:
DMHC3025LSD-13
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

7.8A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

1.5W

Forward Voltage Vf

0.7V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

5.4nC

Transistor Configuration

Full Bridge

Maximum Operating Temperature

-55°C

Width

3.95 mm

Height

1.5mm

Length

4.95mm

Standards/Approvals

UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020

Number of Elements per Chip

4

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


MOSFET Transistors, Diodes Inc.


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