Diodes Inc Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 2N7002DW-7-F
- RS Stock No.:
- 121-9438
- Mfr. Part No.:
- 2N7002DW-7-F
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$1,359.00
(exc. GST)
HK$1,359.00
(inc. GST)
FREE delivery for orders over HK$250.00
In Stock
- 6,000 unit(s) ready to ship from another location
- Plus 390,000 unit(s) shipping from 12 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$0.453 | HK$1,359.00 |
| 6000 - 27000 | HK$0.444 | HK$1,332.00 |
| 30000 + | HK$0.435 | HK$1,305.00 |
*price indicative
- RS Stock No.:
- 121-9438
- Mfr. Part No.:
- 2N7002DW-7-F
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 115 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 13.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 115 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 13.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 2.2mm | ||
Width 1.35mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Diodes Inc.
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